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| 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V RDS(ON) (max) 7.5 ID(ON) (min) 500mA Order Number / Package TO-92 2N7008 Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 30V -55C to +150C 300C SGD TO-92 7-15 2N7008 Thermal Characteristics Package TO-92 ID (continuous)* 230mA ID (pulsed) 1.3A Power Dissipation @ TC = 25C 1W C/W 125 jc C/W 170 ja IDR* 230mA IDRM 1.3A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min 60 1 2.5 100 1 500 ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance 500 7.5 7.5 Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop 80 50 25 5 20 20 1.5 ns V pF VGS = 0V, VDS = 25V f = 1 MHz VDD = 30V, ID =200 mA, RGEN = 25 ISD = 150mA, VGS = 0V Typ Max Unit V V nA A A mA m Conditions ID = -10A, VGS = 0V VGS = VDS, ID = 250A VGS = 30V, VDS = 0V VGS = 0V, VDS = 50V VGS = 0V, VDS = 50V TA = 125C VGS = 10V, VDS 2VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS = 10V, ID = 0.2A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT PULSE GENERATOR Rgen RL OUTPUT 7-16 |
Price & Availability of 2N7008
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